A 65 mW fully integrated UHF-band CMMB tuner in 65 nm CMOS process
نویسندگان
چکیده
منابع مشابه
A Low-Power Low-Voltage High-Performance Fully Differential OTA in 65-nm CMOS Process
This paper presents the design and analysis of high speed, high gain and fully differential operational transconductance amplifier (OTA) implemented in 65-nm digital CMOS process. The OTA, which employ a folded-cascode topology with gain boosting technique, has rail-to-rail input swing and large output swing. The result shows the DC gain of 82 dB and a unity-gain frequency of 477MHz with phase ...
متن کاملIntegrated D-band transmitter and receiver for wireless data communication in 65 nm CMOS
A 140 GHz transmitter (Tx) and receiver (Rx) chip set has been developed in 65 nm CMOS by using on– off keying non-coherent modulation to support high speed proximity data communication. To the author’s best knowledge, it enables the first integrated multi-Gbps data link in D-band by saving power hungry frequency synthesizer, high speed data convertors and complicated digital signal processor. ...
متن کاملSAR ADC in 65 nm CMOS
This paper presents a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) design for sensor applications. An energy-saving switching technique is proposed to achieve ultra low power consumption. The measured Signal-to-Noise-and-Distortion Ratio (SNDR) of the ADC is 58.4 dB at 2 MS/s with an ultra-low power consumption of only 6.6 μW from a 0.8V supply, resulting in a Figure-...
متن کاملAn 8-GS/s 200-MHz Bandwidth 68-mW ΔΣ DAC in 65-nm CMOS
This paper presents an 8-GS/s, 12-bit input ∆Σ DAC with 200-MHz bandwidth in 65-nm CMOS. The high sampling rate is achieved by a two-channel interleaved MASH 1-1 digital ∆Σ modulator with 3-bit output, resulting in a highly digital DAC with only seven current cells. The two-channel interleaving allows the use of a single clock for both the logic and the final multiplexing. This requires each ch...
متن کاملCMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2012
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-012-4708-2